What question did this study set out to answer?

This research aims to fabricate GaN-based red light-emitting diodes that can emit light at longer wavelengths.

January 20, 2026Electronics Letters0 citationsOpen Access

GaN‐Based Red Resonant Cavity Light‐Emitting Diode up to 673 nm

WOWei OuSouthern University of Science and Technology XHXin HouSouthern University of Science and Technology YMYang MeiXiamen University

Key Points

This research aims to fabricate GaN-based red light-emitting diodes that can emit light at longer wavelengths.
Utilized two dielectric distributed Bragg reflectors as top and bottom mirrors.
Fabricated light-emitting diodes (LEDs) based on GaN material.
Examined the resonant modes of the device.
Achieved an emission wavelength of up to 673 nm.
Marked the longest wavelength for GaN-based microcavity devices to date.
Demonstrated spectral overlap with GaAs-based light-emitting devices.

Abstract

ABSTRACT We successfully fabricated GaN‐based red resonant‐cavity light‐emitting diodes by using two dielectric distributed Bragg reflectors as the top and bottom reflector mirrors. The device exhibited resonant modes up to 673 nm, being the longest emission wavelength ever reported for a GaN‐based microcavity device. This achievement establishes spectral overlap between GaN‐based light‐emitting devices and GaAs‐based devices. This work contributes significantly to the development of GaN‐based microcavity devices in longer wavelengths.

Ask AI

Helpful

Bookmark

View Full Paper