Symmetric transport in sub-5-nm monolayer Sn₂S₂-based homogeneous CMOS devices

Key Points

• This research aims to evaluate the performance of sub-5-nm monolayer Sn₂S₂ MOSFETs using quantum-transport simulations.
• Utilized ab initio quantum-transport simulations to analyze device performance.
• Examined both n-type and p-type configurations of Sn₂S₂ MOSFETs.
• Determined the impact of device symmetry on transport properties.
• Both n-type and p-type Sn₂S₂ MOSFETs achieved promising transport performance.
• Performance metrics indicate favorable results for scaling down to sub-5-nm devices.
• Symmetric design contributes positively to overall device functionality.