Interfacial engineering plays a significant role in advancing the performance and stability of perovskite solar cells (PSCs). In inverted PSCs, nickel oxide (NiOx) is widely used as a hole transport material (HTM). However, poor interactions at the NiOx/CH3NH3PbI3 (MAPbI3) interface often lead to reduced device stability and power conversion efficiency (PCE). To address this issue, dopant-free ultrathin interfacial layers (IFLs) have been introduced between NiOx and the perovskite layer to enhance the interfacial interactions and optimize the device performance. In this work, phenanthro9,10-dimidazole derivatives, SR-1 and SR-2, were rationally designed and synthesized as IFL materials in p-i-n devices with a device configuration of indium tin oxide (ITO)/NiOx/IFL/MAPbI3/PCBM/BCP/Ag. These IFLs not only modify the energy levels of NiOx but also improve the surface morphology and crystallinity of MAPbI3, effectively passivate interfacial defects, facilitate charge extraction, and reduce trap density at the NiOx/MAPbI3 interface. As a result, the PCEs of both devices with SR-1 and SR-2 IFLs outperformed those of the pristine device. The best performance of 20.3% efficiency with nearly negligible hysteresis was achieved from the device with SR-1. Furthermore, the devices with SR molecules achieved remarkable thermal stability under continuous heating at 60 °C and 50-60% relative humidity, highlighting the potential of SR-based IFLs for stable and efficient PSCs.
Ramanujam et al. (Tue,) studied this question.
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