Tungsten carbide (WC) is widely utilized in micro- and nano-manufacturing due to its excellent chemical stability, high-temperature resistance, and mechanical stiffness. However, low polishing efficiency and inadequate machining precision present significant challenges. This study investigates the electrochemical mechanical polishing (ECMP) process of tungsten carbide and compares the effects of KOH, NaNO₃, and H₃PO₄ electrolytes on the electrochemical oxidation of silicon carbide. A concentration of 0.6 mol/L KOH was selected as the electrolyte for the ECMP process. The impact of load, speed, voltage, and the number of polishing pad slots on the surface quality and material removal rate of WC workpieces was evaluated using orthogonal experiments. Under optimized conditions, the polishing experiments achieved an efficient material removal rate of 117.3 nm/min during the rough polishing stage, while the precision polishing stage produced a smooth surface with a surface roughness (Sa) of 8.7 nm.
Tang et al. (Fri,) studied this question.