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February 5, 2026The Journal of Physical Chemistry Letters2 citations

Two-Dimensional Dion–Jacobson-Phase Tin Perovskite Using Heteroaromatic Diammonium Cations for Phototransistors

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XWXinyue WangTDTingting DaiBLBin Liu

Key Points

  • The aim is to develop a 2D DJ-phase tin perovskite using novel diammonium cations to enhance electronic properties.
  • Synthesis of 3AMPYSnI4 using asymmetric diammonium cations.
  • Single-crystal analysis to confirm the DJ-phase structure.
  • Fabrication of thin films for field-effect transistors.
  • 3AMPYSnI4 exhibits a high absorption coefficient of ∼10^5 cm^-1.
  • The FETs show maximum hole mobility of 3.12 × 10^-3 cm² V^-1 s^-1.
  • Device responsivity reaches 1.20 × 10^2 A/W under 460 nm illumination.

Abstract

Two-dimensional (2D) Dion-Jacobson (DJ)-phase tin-based perovskites show great promise for field-effect transistors (FETs) due to their excellent charge transport properties and structural stability. However, the limited variety of diammonium cations has hindered their further development in electronic devices. In this work, we synthesized a 2D DJ-phase tin perovskite, 3AMPYSnI4, using asymmetric diammonium cation 3-(aminomethyl)pyridinium (3AMPY2+). Single-crystal analysis confirms a typical DJ-phase structure with zigzag-stacked inorganic layers. The 3AMPYSnI4 thin film is polycrystalline without a preferred orientation, exhibiting a high absorption coefficient (∼105 cm-1) and p-type nature. The 3AMPYSnI4 FETs show typical p-type transport behavior with a maximum hole mobility of 3.12 × 10-3 cm2 V-1 s-1 and demonstrate good operational stability. Moreover, under 460 nm illumination, the device achieves a responsivity of 1.20 × 102 A/W and a specific detectivity of 1.46 × 1012 Jones, highlighting its potential for visible-light detection. This study provides a new direction for developing 2D DJ-phase perovskites and their applications in high-performance optoelectronic devices.

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Cite This Study

Wang et al. (2026) studied this question.

synapsesocial.com/papers/698434c0f1d9ada3c1fb33dehttps://doi.org/10.1021/acs.jpclett.5c03760
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