Atomic Layer Deposition of Gallium Oxide using Gallium Triazenide and Water

Prosper Simbarashe Mushore; Pamburayi Mpofu; Kenichiro Mizohata; Kostas Sarakinos; Nathan J. O’Brien; Henrik Friis Pedersen

doi:10.1039/d5ma01213a

January 1, 2026Materials AdvancesOpen Access

Atomic Layer Deposition of Gallium Oxide using Gallium Triazenide and Water

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Key Points

To explore the deposition of gallium oxide thin films using thermal atomic layer deposition.
Utilized atomic layer deposition (ALD) technique for deposition.
Employed gallium triazenide as a precursor for gallium oxide.
Integrated water as an oxidizing agent in the deposition process.
Successfully produced gallium oxide (Ga2O3) thin films.
Demonstrated potential applications in power electronics and UV-photodetectors.

Implication

Thermal ALD produces gallium oxide thin films, indicating potential advancements in power electronics and UV detection.

Abstract

Gallium oxide (Ga2O3) is an ultrawide bandgap semiconductor with promising applications in power electronics and UV-photodetectors. Herein, we present thermal atomic layer deposition (ALD) of Ga2O3 thin films using tris(1,3diisopropyltriazenide)gallium(III)...

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Cite This Study

Mushore et al. (2026) studied this question.

synapsesocial.com/papers/698435c9f1d9ada3c1fb4eda https://doi.org/10.1039/d5ma01213a

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Atomic Layer Deposition of Gallium Oxide using Gallium Triazenide and Water

Key Points

Implication

Abstract

Discussion

Cite This Study

Atomic Layer Deposition of Gallium Oxide using Gallium Triazenide and Water

Key Points

Implication

Abstract

Discussion

Cite This Study

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