Novel dual-band photodetector enhances imaging capabilities, suggesting a scalable solution for infrared technology.
Near-infrared and short-wave infrared dual-band detection has emerged as a pivotal enabling technology in across diverse applications spanning material identification, biological diagnostics, and machine vision. Current dual-band device architectures based on vertically stacked photodetectors such as those employing two-dimensional materials or back-illuminated colloidal quantum dots remain constrained by limited large-area manufacturability and incompatibility with standard readout integrated circuits. Here, we report a top-illuminated p-i-n-i-p dual-band photodetector using two distinct sizes of solution-processed PbS colloidal quantum dots, which enables bias-switchable spectral response between near-infrared and short-wave infrared regimes. The device achieves a specific detectivity exceeding 1×10¹¹cm·Hz1/2·W⁻¹ in both bands, with short-wave infrared crosstalk of 0.5% and near-infrared crosstalk of 7.7%. The successful fabrication of a monolithic integrated 128×128 dual-band focal plane array showcases a functional dual-band infrared imager. This work establishes a scalable and silicon-compatible platform toward high-performance, low-cost dual-band infrared imagers.
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Di et al. (2026) studied this question.
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