This analysis primarily aimed to improve the electrical conductivity of binary Al–Si alloy through a variety of processing techniques, including rolling and heat treatment. In particular, the experimental methodology involved subjecting Al–2 wt. %Si alloy to a series of hot rolling, cold rolling, and annealing processes at different temperatures and durations to achieve optimal electrical conductivity levels. The results of the experiments indicated that the highest electrical conductivity of silicon‐influenced samples was reached after annealing at 350°C for 90 min. Although the inclusion of silicon enhanced the strength of aluminum through solid solution strengthening, it also resulted in a decrease in electrical conductivity. Notably, the conductivity was found to increase after annealing due to precipitation coarsening and recrystallization processes, despite a reduction in strength. The Si‐added alloy delayed certain occurrences by facilitating the formation of intermetallic compounds with trace impurities and impeding dislocation slip, which affected processes such as metastable phase formation and recrystallization. Quantitative analysis under the annealed conditions further demonstrated that the addition of silicon at this specific level led to a 2% reduction in electrical conductivity, while simultaneously increasing hardness and tensile strength by 10% each, at the cost of a 10% decrease in ductility. Moreover, improvements of approximately 40% were observed in wear resistance properties. Microstructural analysis confirmed the presence of silicon particles that not only enhanced grain boundary interactions but also strengthened the aluminum matrix.
Mohammad Salim Kaiser (Thu,) studied this question.
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