Investigates how varying Sn doping content affects the properties of ITO thin films, suggesting optimal conditions for electronic applications.
Indium tin oxide (ITO) thin films with 0–20 wt% SnO 2 were prepared via microwave-assisted spray pyrolysis. The 10 wt% SnO 2 -doped film shows optimal optoelectronic performance, suitable for transparent conductive electrodes.
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Feng et al. (2026) studied this question.
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