Localized Laser Recrystallization as an Alternative Route to High‐Efficiency Red InGaN Nanowires

ABSTRACT High‐efficient red emission in III‐nitride semiconductors remains a significant challenge due to crystal degradation caused by high In content and non‐radiative recombination. In this study, we propose a 405 nm laser‐induced re‐crystallization (Re‐Cryst) process to enhance the optical performance of 665 nm red‐emitting core‐shell InGaN/GaN nanowires grown by metal‐organic chemical vapor deposition. Unlike conventional thermal annealing, this laser‐based approach enables localized defect healing and improved lattice ordering while minimizing In decomposition. Micro‐photoluminescence measurements revealed a 1.92‐fold increase in band edge emission intensity at a shifted peak wavelength of 624 nm, attributed to strain relaxation and partial In decomposition. To evaluate the improvement in radiative recombination, we introduce a new figure of merit, referred to as the Radiative‐PL‐Rate (R RPL ), which is defined as the rate of PL intensity at low excitation to that at saturation. The R RPL increased from 6.21% in the as‐grown sample to 11.59% in the Re‐Cryst sample, indicating a substantial suppression of non‐radiative recombination. Furthermore, we demonstrated the mechanisms behind improved crystal quality and radiative efficiency, showing that the Re‐Cryst process selectively heals defects, enhances red emission, and advances high‐performance micro‐displays for next‐generation AR/VR applications.