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February 9, 2026Journal of Applied Physics1 citations

Dual Mechanism Synergistic Optimization of Thermal Stability and Power Consumption in Sb3Te Memory

Dual mechanism synergistic optimization of thermal stability and power consumption of Sb3Te phase-change random access memory

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Authors

NRNingning RongPXPeng XuSGShiwei Gao

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Overview

Demonstrates enhanced thermal stability and reduced power consumption in Sb3Te memory, suggesting improved reliability for data storage technology.

Key Points

  • The aim is to investigate the effects of C and Re co-doping on the properties of Sb3Te phase-change memory films.
  • Prepared C and Re co-doped Sb3Te films using magnetron sputtering.
  • Systematically explored the effects of varying C contents on the films' properties.
  • Measured crystallization temperature and data retention temperatures.
  • Increased crystallization temperature to 231 °C and 10-year data retention temperature to 151.8 °C.
  • Achieved low power consumption of only 5 pJ and improved performance parameters.
  • Significantly reduced resistance drift coefficient to 0.0072.

Cite This Study

Rong et al. (2025) studied this question.

synapsesocial.com/papers/698979f5f0ec2af6756e823fhttps://doi.org/10.1063/5.0279961
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