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February 11, 2026Письма в Журнал экспериментальной и теоретической физики / JETP Letters (Journal of Experimental and Theoretical Physics Letters)0 citations

Anomalous Hall Effect On Magnetic Semiconductor Surface With Strong Rashba Effect

Sobstvennyy anomalnyy effekt Kholla na poverkhnosti magnitnogo poluprovodnika s silnym effektom Rashba

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Authors

VMV. N Men'shov

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Overview

This theoretical study explores the enhanced anomalous Hall effect in a magnetic semiconductor, suggesting new measurement implications.

Key Points

  • The research aims to understand how electron scattering at domain walls affects anomalous conductivity in a magnetic semiconductor with a strong Rashba effect.
  • Theoretical analysis of electron scattering on domain walls.
  • Examination of the band structure related to Berry curvature.
  • Investigation of one-dimensional resonant states at magnetic domain walls.
  • Assessment of effects due to weak exchange splitting and chirality.
  • Identified that resonant states exhibit linear dispersion with minimal spectral broadening.
  • Demonstrated that parallel domain walls contribute measurable effects to the anomalous Hall effect.
  • Found that the polar semiconductor BiTeI, doped with transition metal atoms, serves as a suitable platform for these effects.

Cite This Study

V. N Men'shov (2025) studied this question.

synapsesocial.com/papers/698c1d1d267fb587c655f9f6https://doi.org/10.7868/s3034576625030104
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