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Demonstrates effective control of carrier type in two-dimensional transition-metal dichalcogenides, suggesting improved nanoelectronic applications.
Two-dimensional (2D) transition-metal dichalcogenides (TMDs) hold immense promise for next-generation nanoelectronics and optoelectronics, yet their technological viability hinges on reliable control over carrier type and concentration. In practice, most TMDs...
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Lee et al. (2026) studied this question.
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