Multi‐Physical Field Modulated P‐Bit Device Based on VO ₂ Thin Film

Probabilistic computation using probability bits (P‐bits) is highly effective for combinatorial optimization problems such as integer factorization because of its fast search ability. However, implementing P‐bits with traditional complementary metal‐oxide‐semiconductor (CMOS) technology usually needs external noise for randomness, which complicates fabrication and system integration. To overcome these challenges, we have proposed a VO 2 ‐based P‐bit device where synergistic multi‐physical field modulation (electric, thermal, optical) enables real‐time tunability of randomness—an obvious advance beyond previous P‐bits, which rely primarily on single‐field control. This P‐bit provides excellent durability and inherent randomness, with output probability that can be adjusted via multi‐physical field modulation. Besides introducing a new phase‐change material‐based device approach for high‐performance P‐bits, this study also demonstrates a synergistic multi‐physical field modulation strategy that opens new opportunities for neuromorphic device applications.