Preparation of high-purity Ga₂O₃ by urea/ammonia-induced crystallization of GaOOH and its thermal conversion

Yu Fen Wang; Juan Yang; Jing Mei; Jingyu Zhang; Kui Liu; Hongqiang Wang; Qingyu Li; Xijie Lin

doi:10.1039/d6nj00406g

January 1, 2026New Journal of Chemistry

Preparation of high-purity Ga₂O₃ by urea/ammonia-induced crystallization of GaOOH and its thermal conversion

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Key Points

The aim is to prepare high-purity gallium oxide by using GaOOH as an intermediate and optimizing crystallization methods.
Utilized urea/ammonia-induced crystallization for GaOOH preparation.
Conducted thermal conversion to transform GaOOH to Ga2O3.
Analyzed purity levels of Ga2O3 produced through the proposed method.
Achieved high-purity Ga2O3 suitable for semiconductor applications.
Demonstrated effective crystallization techniques enhancing material quality.

Implication

The research demonstrates high-purity gallium oxide preparation from GaOOH, suggesting effective crystallization methods for semiconductors.

Abstract

Gallium oxide (Ga2O3) is an important semiconductor material. Achieving high-purity Ga2O3 is a prerequisite for its applications. GaOOH is the key intermediate for Ga2O3 preparation. Herein, we propose a new...

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Cite This Study

Wang et al. (2026) studied this question.

synapsesocial.com/papers/6996a8c7ecb39a600b3efe3a https://doi.org/10.1039/d6nj00406g

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Preparation of high-purity Ga₂O₃ by urea/ammonia-induced crystallization of GaOOH and its thermal conversion

Key Points

Implication

Abstract

Discussion

Cite This Study

Preparation of high-purity Ga₂O₃ by urea/ammonia-induced crystallization of GaOOH and its thermal conversion

Key Points

Implication

Abstract

Discussion

Cite This Study

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