First-Principles Study of Band alignment in Passivated and Doped GaN/WSe2 van der Waals Heterojunction

Xiurui Lv; Guijuan Zhao; Yinghui Xie; Haiyan Wu; Peng Wang; Desheng Xue; Guipeng Liu

doi:10.1039/d6cp00067c

January 1, 2026Physical Chemistry Chemical Physics

First-Principles Study of Band alignment in Passivated and Doped GaN/WSe2 van der Waals Heterojunction

View Full Paper

Ask AI

Bookmark

Share

Key Points

Investigate the electronic structure and band alignment of GaN/WSe2 van der Waals heterojunctions for photodetection applications.
Utilized first-principles computational techniques to analyze the heterojunctions.
Examined the effects of passivation and doping on electronic properties.
Compared the band alignment in GaN/WSe2 configurations.
Demonstrated favorable band alignment for enhanced photodetection.
Identified the impact of doping on electronic structure.
Found that the passivation influences the electronic properties positively.

Implication

First-principles study reveals electronic structure and potential for broadband photodetection in GaN/WSe2 heterojunctions.

Abstract

Van der Waals (vdW) heterojunctions formed between GaN and transition metal dichalcogenides (TMDs) hold promise for application in broadband photodetection. Here, we investigate the electronic structure of GaN/WSe 2 heterojunctions....

Discussion

No takes yet. Share an insight, caveat, or question.

Cite This Study

Lv et al. (2026) studied this question.

synapsesocial.com/papers/6996a8e3ecb39a600b3f020c https://doi.org/10.1039/d6cp00067c

View Full Paper

Ask AI

Bookmark

Share

First-Principles Study of Band alignment in Passivated and Doped GaN/WSe2 van der Waals Heterojunction

Key Points

Implication

Abstract

Discussion

Cite This Study

First-Principles Study of Band alignment in Passivated and Doped GaN/WSe2 van der Waals Heterojunction

Key Points

Implication

Abstract

Discussion

Cite This Study

Keep reading

Keep reading