Highly efficient electron transport layer with weak pinning and low barrier contact for solar cells: monolayer GaN on 2D lead-free perovskite

Key Points

• The aim is to revolutionize the electron transport layer in perovskite solar cells for better performance.
• Utilized monolayer GaN as the electron transport layer.
• Assessed the interface performance with lead-free perovskite.
• Examined charge transfer efficiency through experimental measurements.
• Showed a significant increase in charge transfer efficiency compared to conventional layers.
• Reduced energy barriers at the interface were observed.
• Demonstrated weak pinning effects, enhancing overall device performance.