ABSTRACT 2D materials (2DMs) are gaining increased attention for applications such as advanced electronics and neuromorphic computing due to their excellent electrical properties. Among these 2DMs, molybdenum disulfide (MoS 2 ) has shown promise as a resistive switching (RS) layer for memory, selectors, and neuromorphic systems. Electrochemical metallization (ECM) devices based on 2DMs offer ultra‐low energy consumption, large ON/OFF ratios, and switching at sub‐nanometer thicknesses. However, most demonstrations rely on isolated, micrometer‐scale structures fabricated on SiO 2 /Si substrates. The integration of 2DM‐based memristors onto silicon complementary metal‐oxide‐semiconductor (CMOS) platforms is rarely reported, particularly for MoS 2 . This work presents the first nanoscale ∼0.015 µm 2 active area MoS 2 ‐based memristors integrated in the back‐end‐of‐line of 350 nm‐technology CMOS microchips. One‐transistor‐one‐resistor (1T1R) cells exhibited forming‐free, nonvolatile RS with ultra‐low operating voltages (∼0.23 V for the SET and ∼−0.1 V for the RESET) and low cycle‐to‐cycle variability (6.7%). We provide the current‐voltage ( I – V ) characteristics of 19 MoS 2 ‐based 1T1R cells, revealing high repeatability across multiple cycles and devices. Our work represents a significant step toward integrating MoS 2 ‐based nonvolatile memristive devices onto silicon CMOS microchips.
Lee et al. (2026) studied this question.