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February 24, 2026Scientific Reports0 citationsOpen Access

Enhancing Responsivity of β-Ga2O3 Solar-Blind Photodetectors Via Defect States

Boosting the responsivity of β-Ga2O3 metal–semiconductor–metal solar-blind photodetectors through oxygen-related defect states

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Authors

NKN. KeShandong UniversityZDZijian DingJiangsu UniversityTJTeng JiaoAnalog Devices (United States)

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Overview

Investigations demonstrate improved responsivity in solar-blind photodetectors, indicating defect states play a key role in performance.

Key Points

  • The study aims to enhance the responsivity of solar-blind photodetectors by optimizing oxygen-related defect states in β-Ga2O3 films.
  • Utilized metal-organic chemical vapor deposition to grow β-Ga2O3 films on sapphire substrates at varying temperatures.
  • Conducted structural and spectroscopic analyses to assess defect states in the films.
  • Measured responsivity, detectivity, and external quantum efficiency of the fabricated SBPDs.
  • The SBPD from Ga2O3 grown at 900 °C showed a responsivity of 4.2⋅10⁴ A/W.
  • Achieved a detectivity of 1.2⋅10¹³ Jones and an external quantum efficiency of 2.1⋅10⁷%.
  • Identified correlation between oxygen-related defect states and enhanced photoresponse.

Cite This Study

Ke et al. (2026) studied this question.

synapsesocial.com/papers/699d4008de8e28729cf64fa0https://doi.org/10.1038/s41598-026-40487-6
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