An atomic layer deposition (ALD) of aluminum-molybdenum oxide (Al,Mo,O) films, based on cyclic reactions of trimethylaluminum (TMA) and molybdenum dichloride dioxide (MoOCl) vapors, is presented. The effect of adding a water vapor dose into the ALD cycle (TMA-HO-MoOCl) was investigated. The film growth process was studied using a quartz crystal microbalance (QCM). It was established that at a deposition temperature of 180°C, both the TMA-MoOCl and TMA-HO-MoOCl processes exhibit linear growth with growth per cycle (GPC) values of 3.79 Å/cycle and 3.94 Å/cycle, respectively. According to X-ray reflectivity (XRR) and X-ray diffraction (XRD) data, the resulting films had an amorphous structure with a density of ∼3.7 g/cm and a root mean square (RMS) roughness in the range of 10-12 Å. Both types of films had a similar composition. The films contained Mo, Mo, and Mo species.
A.M. Maksumova (2025) studied this question.