Abstract The facet-selective growth of shells on green InP-based quantum dots result in their inferior electron confinement capabilities, posing a challenge for the realization of completely cadmium-free quantum dot light-emitting diode displays. Here, we develop a surface energy homogenization strategy based on ligand adsorption using n-octylamine and diphenylphosphine selenide, effectively suppressing selective growth of ZnSe on the InP (111) facet, resulting in strongly electron-confined InP/ZnSe/ZnS quantum dots with a quantum yield exceeding 92% and a full-width at half-maximum of 35 nm. The resulting quantum dot light-emitting diodes achieve a peak external quantum efficiency of 23.50% and a luminance exceeding 1.4 × 10 5 cd m -2 , with a 107.5-fold increase in device lifetime. Utilized asymmetric wettability-mediated assembly strategy, we achieved quantum dot arrays with an impressive resolution of 8460 PPI. Furthermore, integrating the quantum dots into an active-matrix LED display, we successfully demonstrate the display of both static and dynamic images.
Guo et al. (2026) studied this question.