Quantum transport simulation of Sub-5nm monolayer SiC MOSFET: The underlap-structure impact

Key Points

• The simulation uncovers that the performance of the sub-5nm SiC MOSFET is significantly impacted by the underlap structure.
• Key evidence reveals changes in current flow characteristics and device stability due to the underlap design.
• Quantum transport simulations across various configurations provide insights into efficiency and scalability.
• Findings suggest that optimizing the underlap structure may enhance the performance of future MOSFET designs.