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February 6, 2026Materials Chemistry and Physics

Plasma resistance and etching behavior of APS Y2O3 coatings modified via NH4F immersion process

Jiwon Choi Daegeun Kim Hyewon Seok Kangduk Kim

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Key Points

Improved plasma resistance was observed in APS Y2O3 coatings modified via NH4F immersion, enhancing their durability.
Quantitative analysis indicated a significant increase in resistance, outperforming unmodified coatings by over 30%.
The approach involved a systematic assessment of etching behavior influenced by NH4F immersion on Y2O3 coatings.
These findings highlight the potential for NH4F immersion to enhance durability in plasma environments, needing further exploration.

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Implication

Observational analysis reveals improved etching behavior and plasma resistance in Y2O3 coatings modified by NH4F immersion.

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Cite This Study

Choi et al. (2026) studied this question.

synapsesocial.com/papers/69a768b3badf0bb9e87e5a44 https://doi.org/10.1016/j.matchemphys.2026.132200

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