The operating temperature of a chip is a critical factor determining its operational efficiency and service life. In industrial control environments, temperature imaging of a chip plays a vital role in detecting localized heat accumulation and heat dissipation system failures. Although many advanced techniques have been proposed, achieving high spatiotemporal resolution temperature imaging on the chip still presents significant challenges. In this study, we proposed a temperature imaging method based on ensemble diamond nitrogen-vacancy (NV) centers and applied it to the temperature imaging of interdigital electrodes. This method achieved temperature imaging of the chip surface with a spatial resolution of 863 nm and a temporal resolution of up to 2.05 s, capturing the changes in thermal distribution with different applied voltages. The results indicate that NV centers can overcome the limitations of traditional temperature measurement methods in terms of spatiotemporal resolution, offering a promising measurement solution for chip temperature detection.
Shen et al. (2026) studied this question.