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March 5, 2026Journal of Applied PhysicsOpen Access

Ge as an orbitronic platform: Giant in-plane orbital magneto-electric effect in a two-dimensional hole gas

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Authors

JCJames H. CullenThe University of SydneyDCDimitrie CulcerThe University of Sydney

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Overview

Calculations reveal a strong orbital magneto-electric effect in two-dimensional hole gases, suggesting new orbitronic device applications.

Key Points

  • To explore the orbital magneto-electric effect in two-dimensional hole gases, particularly in Germanium (Ge).
  • Calculated the orbital magneto-electric effect (OME) in two-dimensional hole gases.
  • Examined the generation of orbital angular momentum (OAM) under an applied electric field.
  • Compared the OME in Ge holes with the Rashba–Edelstein effect.
  • Found OME in Ge holes to be significantly large, with OAM density reaching 1012 ℏ/cm2 for electric fields around 104 V/m.
  • Determined that the OME is an order of magnitude larger than the Rashba–Edelstein effect in 2DHGs.
  • Identified unique transitions between heavy and light hole states contributing to the OME.

Cite This Study

Cullen et al. (2026) studied this question.

synapsesocial.com/papers/69a91db5d6127c7a504c0c92https://doi.org/10.1063/5.0309177
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