Develops a model for electron dechanneling in silicon crystals, suggesting new insights into their behavior.
A model of planar channeling of 400 MeV electrons taking into account the dechanneling processes in a crystal is developed. The dynamics of the initial angular distribution of relativistic electrons as a function of standard deviation has been studied. The simulation results for the density function of channeled projectiles distribution in a thick Si (111) crystal are presented.
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O.V. et al. (2010) studied this question.
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