Tuning Surface Reactivity Pathways through Molecular Inhibitor Redosing for Precision Nanopatterning

Key Points

• The research aims to optimize surface reactivity pathways using molecular inhibitors during atomic layer deposition to improve nanofabrication methodologies.
• Utilized area-selective atomic layer deposition (AS-ALD) techniques
• Tested Ru deposits on SiO2 and Si3N4 surfaces
• Implemented molecular inhibitor redosing to tune reactivity pathways
• Achieved precise control over nanostructures
• Noted significant differences in deposition rates on SiO2 vs Si3N4
• Demonstrated enhanced selectivity and fidelity in pattern formation