Demonstrations reveal high-efficiency laser power converters in GaAs heterostructures, indicating potential for advanced energy applications.
Multijunction laser power converters are demonstrated for the first time with high efficiencies for average optical irradiances exceeding 150 W/cm2. The GaAs-based photovoltaic power converting III-V heterostructures are designed with six GaAs subcells having an area of 0.14 cm2, receiving up to 22 W of input power at ~811 nm, delivering over 14 W of output power. The maximum efficiencies are obtained in the range of 30 to 75 W/cm2, and efficiencies > 64% are still obtained at 160 W/cm2. The efficiency reduction for higher irradiance values originates predominantly from residual heat generated in the active layers. For example, in 100% duty factor measurements, the bandgap voltage offset saturates to Woc ~ 170 mV. However, in pulsed mode, Woc values as low as 150 mV have been obtained for a device base temperature of 20 °C. For smaller 0.029 cm2 devices, Woc values around 137 mV are obtained at 240 W/cm2.
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Fafard et al. (2026) studied this question.
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