Facility produces large-area silicon photodetectors, suggesting advancements in semiconductor technology.
Nuova Officina Assergi (NOA) is a novel semiconductor facility located at INFN Laboratori Nazionali del Gran Sasso (LNGS) and operational since the beginning of 2023. According to the ISO-14644-1 standard, it has been classified an ISO-6 clean room and it extends over a surface of 420 m 2 . The infrastructure is divided in two main areas with a reduced radon concentration: a silicon packaging area and detector testing area (about 370 m 2 ), developed for mass operation with large-area cryogenic silicon detectors. A second area with a higher roof (about 6 m) is dedicated to the integration of the produced photodetectors into large experimental apparatuses. The NOA clean room has been also designed to be compatible with the installation of a Radon abatement system that in perspective would provide the opportunity to perform the packaging and test operations in a Radon free environment. NOA will be available for public and private users upon request to LNGS Directorate from 2027.
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A. Marasciulli (2026) studied this question.
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