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March 6, 2026The Journal of Physical Chemistry COpen Access

Vacancy-Driven Electronic Effects in Few-Layer HfS 2 Probed by Scanning Tunneling Microscopy and Spectroscopy

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Authors

GRGuilherme Rodrigues-FonteneleGFGabriel FonteneleLPLucas Polesi

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Overview

Investigates electronic effects linked to vacancies in hafnium disulfide, suggesting significant implications for its semiconducting properties.

Key Points

  • The research aims to explore the electronic effects caused by vacancies in hafnium disulfide (HfS2) across different layers.
  • Utilized scanning tunneling microscopy/spectroscopy for observation
  • Conducted density functional theory simulations
  • Examined both bulk and few-layer HfS2
  • Analyzed variations in the Fermi level and band gap
  • Observed Fermi level shifts due to sulfur vacancies
  • Identified p-type behavior in stoichiometric regions and n-type behavior in defective areas
  • Noted a decrease in band gap from 1.28 eV to 1.19 eV near sulfur vacancies
  • Reported thickness-dependent band gap changes ranging from 1.48 eV to 1.28 eV

Cite This Study

Rodrigues-Fontenele et al. (2026) studied this question.

synapsesocial.com/papers/69aa6f3c531e4c4a9ff5943ehttps://doi.org/10.1021/acs.jpcc.5c08105
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