This research demonstrates improved plasma resistance and effective removal of Sn contaminants in EUV mirrors using TiO2 capping.
The long-term stability of extreme ultraviolet (EUV) lithography mirrors relies on protective capping layers capable of resisting plasma irradiation while simultaneously facilitating the removal of Sn contaminants. TiO 2 ,...
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Wang et al. (2026) studied this question.
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