Radiation-hard memcapacitive synapses based on HfO ₂ ferroelectric thin films

Bio-inspired electronic synapses hold significant potential for advancing neuromorphic computing in space applications. Emerging memcapacitors based on HfO 2 ferroelectric thin films are promising candidates for artificial synaptic devices, due to their high-density integration capability and ultra-low power consumption. However, their synaptic behaviors under radiation exposure have rarely been explored. This work systematically investigates the effects of neutron and proton irradiations on the synaptic characteristics of Hf 0.5 Zr 0.5 O 2 -based ferroelectric memcapacitors. X-ray diffraction and atomic force microscopy analyses reveal no significant degradation in the microstructure following both types of irradiations. Furthermore, key electrical characteristics including the capacitance memory window, relative permittivity, and potentiation/depression behaviors, remain stable after 5×10 11 protons/cm 2 and 3×10 13 neutrons/cm 2 irradiations, respectively. These findings establish a critical foundation for developing radiation-tolerant bio-electronic synapses and advancing neuromorphic computing in space environments.