What question did this study set out to answer?

Analyze the electronic structures and spin polarization of Co2FeSi x Al1− x /Ge interfaces using density functional theory.

March 8, 2026AIP AdvancesOpen Access

Compositional dependence of the electronic structures of Co2FeSi x Al1− x /Ge half-metal/semiconductor interfaces

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Authors

ZNZlatko NedelkoskiMother Teresa Hospital JNJ. do NascimentoUniversity of York ASAleksandar SkeparovskiInstitute of Chemistry

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Overview

Density functional theory analyzes electronic structures and spin polarization in Co2FeSi x Al1− x /Ge interfaces, suggesting optimization strategies.

Key Points

Analyze the electronic structures and spin polarization of Co2FeSi x Al1− x /Ge interfaces using density functional theory.
Utilized density functional theory for electronic structure analysis
Studied interfaces with Si content ranging from 0 to 1.0
Assessed stability and spin polarization of antiparallel and parallel epitaxial relationships
Evaluated local potential and energy barriers for electron injection
Antiparallel interfaces are more stable than parallel by approximately 0.4 eV/supercell
Interfacial spin polarization varies from ∼40% (Al-rich) to −24% (x = 1)
Co2FeAl/Ge interface has a lower energy barrier of 0.4 eV for majority spin-up electron injection
Energy barrier increases to 0.5 eV for Co2FeSi/Ge interface

Cite This Study

Nedelkoski et al. (2026) studied this question.

synapsesocial.com/papers/69ada8dfbc08abd80d5bc54f https://doi.org/10.1063/5.0320389

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March 8, 2026AIP AdvancesOpen Access

Compositional dependence of the electronic structures of Co2FeSi x Al1− x /Ge half-metal/semiconductor interfaces

View Full Paper

Ask AI

Bookmark

Authors

ZNZlatko NedelkoskiMother Teresa Hospital JNJ. do NascimentoUniversity of York ASAleksandar SkeparovskiInstitute of Chemistry

Discussion

Member takes

Overview

Density functional theory analyzes electronic structures and spin polarization in Co2FeSi x Al1− x /Ge interfaces, suggesting optimization strategies.

Key Points

Analyze the electronic structures and spin polarization of Co2FeSi x Al1− x /Ge interfaces using density functional theory.
Utilized density functional theory for electronic structure analysis
Studied interfaces with Si content ranging from 0 to 1.0
Assessed stability and spin polarization of antiparallel and parallel epitaxial relationships
Evaluated local potential and energy barriers for electron injection
Antiparallel interfaces are more stable than parallel by approximately 0.4 eV/supercell
Interfacial spin polarization varies from ∼40% (Al-rich) to −24% (x = 1)
Co2FeAl/Ge interface has a lower energy barrier of 0.4 eV for majority spin-up electron injection
Energy barrier increases to 0.5 eV for Co2FeSi/Ge interface

Cite This Study

Nedelkoski et al. (2026) studied this question.

synapsesocial.com/papers/69ada8dfbc08abd80d5bc54f https://doi.org/10.1063/5.0320389

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