Growth of VTe ₂ Thin Films via Radio‐Frequency Magnetron Cosputtering and Changes in Their Physical Properties During the Amorphous‐To‐Crystalline Phase Transition

Transition metal dichalcogenides (TMDs) have attracted significant interest due to their potential to overcome scaling limitations in advanced electronic devices, making them promising candidates for next‐generation electronics and optoelectronics. Conventional fabrication methods such as chemical vapor deposition and molecular beam epitaxy enable TMD thin‐film growth; however, various issues such as long deposition times and stringent substrate requirements hinder direct growth on standard silicon wafers, limiting large‐scale manufacturing. In this study, VTe 2 (a type of TMDs) thin films are fabricated via radiofrequency magnetron cosputtering, a technique well suited for uniform, large‐area deposition. The as‐deposited amorphous films crystallize into layered VTe 2 structures upon annealing to 473 K, as confirmed by X‐ray diffraction and cross‐sectional transmission electron microscopy. Hall‐effect measurements indicate a substantial increase in carrier mobility and reveal a change in electrical conduction behavior from semiconductor‐like to metallic upon crystallization. This work represents the first comprehensive study of large‐area layered VTe 2 thin films deposited by sputtering, with a systematic evaluation of their structural, electrical, and optical properties across the amorphous‐to‐crystalline phase transition.