Hybrid Quantum Sensing in 4H‐SiC Enabled by the Integration of Vanadium and Silicon Vacancy for Simultaneous Temperature and Magnetic Field Detection

Isolated vanadium (V) ions and silicon vacancies (V Si − ) in 4H‐SiC are promising candidates for quantum light sources and sensors owing to their stable near‐infrared photon emission and optically addressable spin states. In this paper, we present a hybrid quantum sensing platform based on 4H‐SiC incorporating both V and V Si − centers. We investigate the temperature dependence of photo‐ and electro‐luminescence from V centers in 4H‐SiC, and demonstrate an O‐band light‐emitting diode based on a V‐doped 4H‐SiC PiN structure, operating stably up to 523 K. Furthermore, we successfully fabricate 4H‐SiC containing V and V Si − centers by employing high‐energy electron irradiation. These centers are spectrally distinct, allowing ratiometric thermometry based on the emission intensity ratio between V and V Si − centers. This sensing scheme achieves high relative sensitivity (1.74% K −1 ), high resolution (0.143 K Hz −1/2 ), and a broad operational range (79–623 K), highlighting its practical applicability. Additionally, we demonstrate simultaneous detection of magnetic field and temperature by combining optically detected magnetic resonance of V Si − with the ratiometric thermometry. This simple and scalable sensing scheme highlights the potential of SiC as a multifunctional quantum material, enabling the integration of multiple optically addressable spin defects for advanced quantum technologies.