ABSTRACT Fluorite structure ferroelectrics, especially hafnium oxide, are widely investigated for their application in non‐volatile memories, sensors, actuators, RF devices, and energy harvesters. Due to the metastable nature of the ferroelectric phase in these materials, dopants, and process parameters need to be optimized for its stabilization. Here, we present clear evidence of how dopants affect the properties in this material system and solutions to achieve improved reliability, desired crystallization behavior, and polarization hysteresis shape/position through co‐doping. Finally, the benefits of co‐doping in a variety of application fields are demonstrated. This study provides a comprehensive ‘co‐doping toolkit’ for tailoring fluorite‐structure ferroelectrics to meet specific application requirements.
Yang et al. (2026) studied this question.