Stoichiometry-driven tuning of hole conductivity in MOCVD-grown β-Ga2O3 on r-sapphire substrates

Key Points

• The main aim is to examine how stoichiometry affects hole conductivity in β-Ga2O3.
• Utilized metal-organic chemical vapor deposition (MOCVD) to grow β-Ga2O3 films.
• Altered stoichiometric ratios of the materials used in growth.
• Conductivity measurements were conducted to evaluate outcomes.
• Demonstrated that specific stoichiometric adjustments significantly enhance hole conductivity.
• Identified optimal stoichiometric conditions for improved performance.