Stoichiometry-driven tuning of hole conductivity in MOCVD-grown β-Ga2O3 on r-sapphire substrates

Zeyu Chi; Corinne Sartel; Yi Zheng; Yves Dumont; Ekaterine Chikoidze

doi:10.1021/acs.cgd.5c01728

January 1, 2026Open Access

Stoichiometry-driven tuning of hole conductivity in MOCVD-grown β-Ga2O3 on r-sapphire substrates

View Full Paper

Ask AI

Bookmark

Share

Key Points

The main aim is to examine how stoichiometry affects hole conductivity in β-Ga2O3.
Utilized metal-organic chemical vapor deposition (MOCVD) to grow β-Ga2O3 films.
Altered stoichiometric ratios of the materials used in growth.
Conductivity measurements were conducted to evaluate outcomes.
Demonstrated that specific stoichiometric adjustments significantly enhance hole conductivity.
Identified optimal stoichiometric conditions for improved performance.

No abstract yet

We only have this paper's title and publication details.

Read it at the source

Ask about this paper

Answers are grounded in this paper and cite their sources.

Implication

Investigates conductivity modifications in β-Ga2O3 layered on r-sapphire substrates, suggesting important implications for semiconductor applications.

Abstract

International audience

Discussion

No takes yet. Share an insight, caveat, or question.

Cite This Study

Chi et al. (2026) studied this question.

synapsesocial.com/papers/69b25b0996eeacc4fcec94ae https://doi.org/10.1021/acs.cgd.5c01728

View Full Paper

Ask AI

Bookmark

Share

Stoichiometry-driven tuning of hole conductivity in MOCVD-grown β-Ga2O3 on r-sapphire substrates

Key Points

No abstract yet

Ask about this paper

Implication

Abstract

Discussion

Cite This Study

Stoichiometry-driven tuning of hole conductivity in MOCVD-grown β-Ga2O3 on r-sapphire substrates

Key Points

No abstract yet

Ask about this paper

Implication

Abstract

Discussion

Cite This Study

Keep reading

Keep reading