Dual-Gate-Controlled Ferroelectric Field-Effect Transistor Based on Sr 1.8 Bi 0.2 Nb ₃ O ₁₀ Perovskite Nanosheets for a Logic Memristor

Two-dimensional (2D) perovskite ferroelectric materials have garnered significant research interest due to their large spontaneous polarization, broad operational window, and high dielectric constant, rendering them highly advantageous in nonvolatile ferroelectric memory devices. In this study, we fabricate a PVDF-TrFE dual-gate-modulated Sr1.8Bi0.2Nb3O10 (SBNO) FeFET to investigate the regulatory mechanism of PVDF-TrFE ferroelectric polarization on SBNO FeFET at the nanoscale. The fabricated device exhibits an impressive on/off ratio exceeding 106. Furthermore, we systematically examine the modulation effect of dual-gate polarization loading on the channel layer conductivity. By leveraging distinct conductive states, we successfully demonstrate the simulation of NAND logic gate operations. This work expands the application scope of ferroelectric perovskite nanosheets in multifunctional 2D ferroelectric devices.