Demonstrates a model explaining dark current behavior in silicon-based detectors, indicating important implications for device performance.
Dark current in silicon‐based blocked impurity band (BIB) infrared detectors has long been a critical limitation on device performance. This work proposes a chiral‐phonon‐assisted spin current model at interfaces to explain the parabolic‐like dark current behavior observed at low bias voltages. Concurrently, the space charge limited current (SCLC) theory is employed to elucidate the dark current generation mechanism across the entire operational voltage range.
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Cui et al. (2026) studied this question.
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