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January 1, 2026RSC AdvancesOpen Access

Two-dimensional reduced graphene oxide as high-efficiency hole injection layer for quantum dot light-emitting diodes

S. Yang Y. F. Wang Yang Hu Zhidong Lou Yanbing Hou Feng Teng Yu Shrike Zhang

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Key Points

To evaluate the performance of reduced graphene oxide as a hole injection layer in quantum dot light-emitting diodes.
Developed rGO-based quantum dot light-emitting diodes (QLEDs) with specified characteristics.
Compared performance metrics such as turn-on voltage and maximum luminance against PEDOT:PSS-based devices.
Achieved a turn-on voltage of 2.0 V.
Maximized luminance of 120,000 cd m −2.
Resulted in an external quantum efficiency (EQE) of 11.74%, comparable to PEDOT:PSS-based devices.

Implication

Demonstrates high-efficiency hole injection in quantum dot light-emitting diodes, implying improved device performance.

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Cite This Study

Yang et al. (2026) studied this question.

synapsesocial.com/papers/69b4ada918185d8a398014cd https://doi.org/10.1039/d6ra00068a

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Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1Photoluminescence Enhancement Effect of CsPbBr3 Quantum Dots Modified by Differently Reduced Graphene Oxide for QLED DevicesOriginal Research · 2026
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4Red Quantum Dot Light‐Emitting Diodes With 31.3% EQE Enabled by a Pyridyl‐Triazine Electron Transport MaterialOriginal Research · 2026 · 1 citations
5Highly emissive blue graphene quantum dots with excitation-independent emission via ultrafast liquid-phase photoreductionOriginal Research · 2024 · 8 citations

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