A First-Principles Study of Monolayer B 4 Cl 4 : Structural Stability, Anisotropic Electronic Properties, and Ballistic Transport Projections in Sub-5 nm MOSFETs
A first-principles study investigates the stability and electronic properties of B4Cl4 for MOSFET applications, suggesting its potential for advanced devices.
Key Points
The research aims to explore the structural stability and electronic properties of chlorinated boronene (B4Cl4) for use in MOSFETs.
Conducted first-principles calculations to evaluate crystal structure and electronic characteristics.
Developed n-type and p-type B4Cl4-based MOSFET prototypes with varying channel lengths.
Assessed quantum transport limits in relation to traditional semiconductor standards.
N-type MOSFETs with 5.0 nm channel length meet high-performance benchmarks set by ITRS.
The 5.0 nm device demonstrates a subthreshold swing approaching theoretical limits.
The y-directional transport device shows an on-state current 170.63% higher than ITRS benchmarks.
Optimized devices with 3.0 nm underlap region exhibit intrinsic delays and power-delay products significantly below ITRS standards.