The electrical properties of extruded bulk nanostructured samples of BiSb solid solution samples doped with 0.0005 at.% of Te, with grain sizes of 200 μm, 38, 32, and 15 nm in the temperature range of 90– 300 K before and after optimal annealing. It was found that in these samples, texture plays a predominant role in the scattering of charge carriers at low temperatures, and the change in their electrical properties can be satisfactorily explained by the processes occurring in the structure of the samples during hot extrusion and post-extrusion heat treatment.
Tagiyev et al. (2025) studied this question.