Heterogeneous Integration of Diamond Electronics: Transistors, Diodes, and Packaging

Advanced packaging is a promising solution to exploit the benefits of scaling down by developing new architecture, reducing communication distance and achieving higher packaging density. To attain this, standardization, new processing techniques, co-design tools and multi-physics simulation techniques are critical to advanced packaging technology. Diamond in advanced packaging as well as heterogenous integration of diamond with dielectrics and semiconductors is crucial in achieving advanced packaging for high power and high temperature applications. Among wide bandgap semiconductor materials, diamond demonstrates extreme hardness, chemical inertness, high thermal conductivity, high hole and electron mobility, high dielectric strength and high breakdown strength, and has the widest band gap. These properties are ideal for high power amplifiers and switches, as well as for heat sinks for advanced packaging. The present review will describe our approach that combines the novel CVD growth techniques and delta doping concepts already demonstrated in order to achieve innovative diamond FETs or HEMTs for high power applications. Diamond is heterogeneously integrated with graphene as well as other wide bandgap materials in order to achieve state of the art results in thermal management.