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March 26, 2026Russian Microelectronics

Resistive Switching of Memristors Based on (CoFe)x(SiO2)100–x Nanocomposite and LiNbO3 Layers with Ni Electrode

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Authors

SNS. N. NikolaevGNG. S. NikolaevASA. V. Sitnikov

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Overview

Demonstrates improved resistive switching characteristics in memristors, suggesting potential for neuromorphic systems.

Key Points

  • The research aims to explore the resistive switching properties of memristive structures using specific nanocomposite and dielectric materials.
  • Investigation of Cu/NC/D/Ni memristive structures with varying nanocomposite and dielectric layers.
  • Annealing of samples at 300°C for 10 minutes.
  • Measurement of high-resistance state and low-resistance state ratios.
  • Annealing increases the Roff to Ron ratio and enhances the stability of the resistive state.
  • Greater thickness of the LiNbO3 layer correlates with increased Roff, Ron, and RS voltage.
  • Memristors demonstrate stable multilevel resistive switching over multiple cycles.

Cite This Study

Nikolaev et al. (2025) studied this question.

synapsesocial.com/papers/69c4cc37fdc3bde44891773dhttps://doi.org/10.1134/s1063739725601122
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