Resistive Switching of Memristors Based on (CoFe)x(SiO2)100–x Nanocomposite and LiNbO3 Layers with Ni Electrode

The properties of Cu/NC/D/Ni memristive structures with thin layers of (CoFe)x(SiO2)100–x nanocomposite (230 nm) and LiNbO3 dielectric (14–28 nm) are studied. It is shown that annealing the structures at 300°C for 10 min leads to increase in the ratio of the high-resistance state (Roff) to the low-resistance state (Ron). Heat treatment also increases the stability of resistive state. The increase of the LiNbO3 layer thickness increases in the values of Roff, Ron, and the resistive switching (RS) voltage of the structures to the low-resistance state. The structures exhibit stable multilevel RS in successive cycles of potentiation and depression, which, coupled with plasticity and a high Roff/Ron ratio, demonstrates the prospects of their use as synapses in the development of neuromorphic systems.