In recent years, the integration of semiconductor integrated circuits has been increasing, leading to higher heat densities in electronic devices. Consequently, advanced cooling techniques for high heat fluxes are demanded. Cooling techniques utilizing phase change phenomena, such as flow boiling, are promising methods for cooling high-heat-density devices. Shear-driven liquid film flow, one of the techniques utilizing phase change, is proposed as an effective cooling technique due to its superior heat transfer performance. Shear-driven liquid film flow involves a liquid film that is accelerated by increased interfacial shear stress caused by co-current gas flow. The thickness of the liquid film, which is a key factor for determining heat transfer performance utilizing phase change phenomena, can be controlled by adjusting the gas flow rate. This control mechanism enables improved heat transfer performance compared to flow boiling. In this study, to investigate the critical heat flux characteristics of the shear-driven liquid film flow, experiments were conducted. The experimental setup includes a heating surface 100 mm in length, with a channel 10 mm wide and 2 mm high. Water and nitrogen were used as the test liquid and gas, respectively. The results indicate that the disturbance waves contribute significantly to critical heat flux.
NISHI et al. (Wed,) studied this question.