Experimental study reveals strong spin relaxation dependence on temperature in narrow-gap semiconductor PbCuMnGdS, suggesting important ion interactions.
In the electron paramagnetic resonance spectra of Mn and Gd ions in crystals of the narrow-gap semiconductor PbCuMnGdS (x ≈ 6 · 10, y ≈ 4 · 10), an unusually strong dependence of the spin relaxation processes of these ions on temperature and the power of microwave radiation in the X-band acting on the crystal sample in a magnetic field was found. The observed effect is manifested as sharp dependences of the line shape parameters of the EPR spectra of Mn and Gd ions on temperature and microwave power. The results of the experimental study indicate a high efficiency of exchange interaction between these ions via free charge carriers.
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Ulanov et al. (2025) studied this question.
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