SmartSiC™ 150 & 200mm Engineered Substrate: Addressing Bipolar Degradation of SiC MOSFETs Body Diode

Key Points

• The research aims to address the bipolar degradation of SiC MOSFETs by using engineered substrates.
• Utilized SmartSiC™ 150 and 200mm engineered substrates.
• Conducted thermal and electrical performance assessments.
• Analyzed the body diode performance under different conditions.
• Engineered substrates significantly reduced bipolar degradation.
• Improved thermal stability was observed in the tested SiC MOSFETs.
• Enhanced reliability and efficiency in device operation were reported.