PulseExploreJournal ClubDebatesTrendingResearchersJournals
Instagram
HomeExploreJournal ClubTrending
Synapse
⌘+K
Synapse
March 29, 2026Микроэлектроника / Russian Microelectronics0 citations

FEATURES OF RESISTIVE SWITCHING OF MEMRISTORS BASED ON PbTe NANOPARTICLES WITH PPX UNDER PHOTOEXCITATION

View Full Paper
ATA. D. TrofimovSNS. N. NikolaevAEA. V. Emelyanov

Key Points

  • The research aims to explore the structural and memristive properties of memristors that integrate PbTe nanoparticles with PPX under photoexcitation.
  • Examined layered Cu/PPX–PbTe/ITO samples.
  • Investigated memristive properties under varying light conditions.
  • Developed a qualitative model to explain switching mechanisms.
  • Under illumination, conductivity increases in the high-resistance state.
  • Negative photoconductivity occurs in the low-resistance state during cyclic resistive switching.
  • Demonstrated the potential of hybrid PPX-memristors for sensory and synaptic applications.

Abstract

Structural and memristive properties of layered Cu/PPX–PbTe/ITO samples based on parylene (poly-p-xylylene, PPX) with PbTe nanoparticles were studied. An unusual effect of light on the nature of resistive switching (RS) was discovered: in the high-resistance state the memristor conductivity increases under illumination, whereas in the low-resistance state negative photoconductivity (i.e., a noticeable decrease) is observed during cyclic RS. A qualitative model, that describes the switching mechanism under optical excitation and in its absence, is proposed. The characteristics of RS and the possibility of controlling them using illumination demonstrate the possibility of using hybrid PPX-memristors as sensory and synaptic elements in the development of neuromorphic computer vision systems.

Ask AI
Helpful
Bookmark
Share
View Full Paper

Cite This Study

Trofimov et al. (2025) studied this question.

synapsesocial.com/papers/69c8c2a4de0f0f753b39d096https://doi.org/10.7868/s3034548025060037
Ask AI
Helpful
Bookmark
Share
View Full Paper