Theoretical model explores magnetization reversal in synthetic antiferromagnets, suggesting lower field switching in non-compensated layers.
A theoretical model of a spin-tunnel element containing a synthetic antiferromagnet was developed, based on the concept of coherent rotation of magnetization vectors of ferromagnetic nanolayers under the influence of an external magnetic field. The obtained field dependences cos() for nearly compensated and non-compensated synthetic antiferromagnets show that a 30% non-compensated synthetic antiferromagnet switches magnetization at lower fields.
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Vasilyev et al. (2025) studied this question.
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