Effect of Electron Irradiation on the Parameters of Gallium Nitride in a Wide Temperature Range

When irradiating MOVPE n-GaN with electrons with an energy of 0.9 MeV, the values of the carrier removal rate, ƞ for room temperature were established for the first time within the framework of the Van der Pauw method. At the initial (before irradiation) electron concentration of 1.87 × 10 cm, the values of ƞ were 0.023 cm and 0.054 cm at room temperature (293 K) for doses Ф = 1.7 × 10 cm and Ф = 3.7 × 10 cm, respectively. With temperature decrease, the ƞ value increases: at T = –55°C, the ƞ values are 0.064 cm and 0.086 cm for doses of 1.7 × 10 cm and 3.7 × 10 cm respectively. The maximum mobility value in non-irradiated samples is 650 cm/Vs. After irradiation with a dose of Ф = 3.7 × 10 cm, the maximum mobility value decreases to 530 cm/Vs. The change in mobility under the influence of irradiation is reliably traced at temperatures of T ≤ 260 K (1000/T ≈ 3.85).